Product Summary

The IRF7204TR is a Power MOSFET. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF7204TR is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. With these improvements, the IRF7204TR can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Parametrics

IRF7204TR absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V:-5.3A; (2)Continuous Drain Current, VGS @ 10V:-4.2A; (3)Pulsed Drain Current:-21A; (4)Power Dissipation:2.5W; (5)Linear Derating Factor:0.020W/℃; (6)Gate-to-Source Voltage:±12V; (7)Peak Diode Recovery dv/dt:-1.7V/nS; (8)Junction and Storage Temperature Range:-55℃ to +150℃.

Features

IRF7204TR features: (1)Adavanced Process Technology; (2)Ultra Low On-Resistance; (3)P-Channel MOSFET; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.

Diagrams

IRF7204TR pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7204TR
IRF7204TR


MOSFET P-CH 20V 5.3A 8-SOIC

Data Sheet

Negotiable 
IRF7204TRPBF
IRF7204TRPBF

International Rectifier

MOSFET MOSFT PCh -20V -5.3A 60mOhm 25nC

Data Sheet

0-1: $0.70
1-25: $0.41
25-100: $0.25
100-250: $0.24