Product Summary

The STP8NM60FP MDmesh Power MOSFET is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.

Parametrics

Absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 600 V; (2)VDGR, Drain-gate Voltage (RGS = 20 kW): 600 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃:8 A; (5)ID, Drain Current (continuous) at TC = 100℃: 5 A; (6)IDM, Drain Current (pulsed): 32A; (7)PTOT, Total Dissipation at TC = 25℃: 30 W; Derating Factor: 0.24 W/℃; (8)dv/dt, Peak Diode Recovery voltage slope: 15 V/ns; (9)VISO, Insulation Withstand Voltage (DC): 2500 V; (10)Tj, Operating Junction Temperature: -55 to 150℃; (11)Tstg, Storage Temperature: -55 to 150 ℃.

Features

Features: (1)typical rds(on) = 0.9Ω; (2)high dv/dt and avalanche capabilities; (3)100% avalanche tested; (4)low input capacitance and gate charge; (5)low gate input resistance.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP8NM60FP
STP8NM60FP
STMicroelectronics
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Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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STP80N03L-06
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Data Sheet
0-1: $3.92
1-10: $3.36
10-100: $2.77
100-250: $2.54
STP80NE03L-06
STP80NE03L-06
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Data Sheet
Negotiable 
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Data Sheet
Negotiable