Product Summary

The 1SS226 is a Toshiba silicon epitaxial planar type diode.

Parametrics

1SS226 absolute maximum ratings: (1)Maximum reverse voltage, VRM: 85V; (2)Reverse voltage, VR: 80V; (3)Maximum forward current, IFM: 300mA; (4)Average forward current, IO: 100mA; (5)Surge current, IFSM: 2A; (6)Power dissipation, P: 150mW; (7)Junction temperature, Tj: 125℃; (8)Storage temperature range, Tstg: -55 to 125℃.

Features

1SS226 features: (1)Small package: SC-59; (2)Low forward voltage: VF=0.9V; (3)Fast reverse recovery time: trr=1.6ns; (4)Small total capacitance: CT=0.9pF.

Diagrams

1SS226 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
1SS226
1SS226

Other


Data Sheet

Negotiable 
1SS226T5LFT
1SS226T5LFT

Toshiba

Rectifiers Diode

Data Sheet

0-1: $0.25
1-10: $0.18
10-100: $0.14
100-250: $0.11
1SS226TE85LF
1SS226TE85LF

Toshiba

Rectifiers Diode

Data Sheet

Negotiable 
1SS226TE85L
1SS226TE85L

Toshiba

Rectifiers DIODE

Data Sheet

Negotiable