Product Summary
The 1SS226 is a Toshiba silicon epitaxial planar type diode.
Parametrics
1SS226 absolute maximum ratings: (1)Maximum reverse voltage, VRM: 85V; (2)Reverse voltage, VR: 80V; (3)Maximum forward current, IFM: 300mA; (4)Average forward current, IO: 100mA; (5)Surge current, IFSM: 2A; (6)Power dissipation, P: 150mW; (7)Junction temperature, Tj: 125℃; (8)Storage temperature range, Tstg: -55 to 125℃.
Features
1SS226 features: (1)Small package: SC-59; (2)Low forward voltage: VF=0.9V; (3)Fast reverse recovery time: trr=1.6ns; (4)Small total capacitance: CT=0.9pF.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1SS226 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
1SS226T5LFT |
Toshiba |
Rectifiers Diode |
Data Sheet |
|
|
|||||||||||||
1SS226TE85LF |
Toshiba |
Rectifiers Diode |
Data Sheet |
Negotiable |
|
|||||||||||||
1SS226TE85L |
Toshiba |
Rectifiers DIODE |
Data Sheet |
Negotiable |
|