Product Summary

The 2SK2698 is TOSHIBA field effect transistor silicon N channel MOS type.

Parametrics

2SK2698 maximum ratings: (1)Drain.source voltage VDSS: 500 V; (2)Drain.gate voltage (RGS = 20 kΩ) VDGR: 500V; (3)Gate-source voltage VGSS: ±30 V; (4)DC ID: 15 A; (5)Drain current Pulse IDP: 60 A; (6)Drain power dissipation (Tc = 25℃) PD: 150 W; (7)Single pulse avalanche energy: EAS 630 mJ; (8)Avalanche current IAR: 15 A; (9)Repetitive avalanche energy EAR: 15 mJ; (10)Channel temperature Tch: 150 ℃; (11)Storage temperature range Tstg: -55~150 ℃.

Features

2SK2698 features: (1)Low drain-source ON resistance : RDS (ON) = 0.35 Ω (typ.); (2)High forward transfer admittance : |Yfs| = 11 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 500 V); (4)Enhancement.mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Diagrams

2SK2698 pinout

Image Part No Mfg Description Data Sheet Download Pricing
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2SK2698
2SK2698

Other


Data Sheet

Negotiable 
2SK2698(F,T)
2SK2698(F,T)

Toshiba

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Data Sheet

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2SK2698(T)
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Data Sheet

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