(China (Mainland))
Product Summary
The 2SK2916 is a TOSHIBA field effect transistor designed for DC-DC converter, relay drive and motor drive applications.
Parametrics
Maximum ratings: (1)Drain–source voltage, VDSS: 500 V; (2)Drain–gate voltage (RGS = 20 kΩ), VDGR: 500V; (3)Gate–source voltage, VGSS: ±30 V; (4)Drain current: DC, ID: 14 A; Pulse, IDP: 56 A; (5)Drain power dissipation (Tc = 25℃), PD: 80 W; (6)Single pulse avalanche energy, EAS: 795 mJ; (7)Avalanche current, IAR: 14 A; (8)Repetitive avalanche energy, EAR: 8 mJ; (9)Channel temperature, Tch: 150 ℃; (10)Storage temperature range, Tstg: -55~150 ℃.
Features
Features: (1)Low drain–source ON resistance: RDS (ON) = 0.35 Ω (typ.); (2)High forward transfer admittance: |Yfs| = 11 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 500 V); (4)Enhancement–mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK2916 |
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MOSFET N-CH 500V 14A TO-3PN |
Data Sheet |
Negotiable |
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2SK2916(F) |
Toshiba |
MOSFET N-ch 500V 14A 0.4 ohm |
Data Sheet |
Negotiable |
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