Product Summary
The BAR90-02L is a Silicon Deep Trench PIN Diode.
Parametrics
BAR90-02L absolute maximum ratings: (1)Diode reverse voltage:80V; (2)Forward current:100mA; (3)Total power dissipation:150mW ; (4)Junction temperature:150℃; (5)Operating temperature range:-55℃ to 125℃; (6)Storage temperature:-55℃ to 150℃.
Features
BAR90-02L features: (1)Optimized for low bias current antenna switches in hand held applications; (2)Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF); (3)Low forward resistance (typ. 1.3Ω @ IF = 3 mA); (4)Improved ON / OFF mode harmonic distortion balance; (5)Pb-free (RoHS compliant) package; (6)Qualified according AEC Q101.
Diagrams
BAR90081LSE6327XT |
Infineon Technologies |
PIN Diodes Silicon Deep Trench PIN Diodes |
Data Sheet |
Negotiable |
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BAR99TC |
Diodes Inc. / Zetex |
Diodes (General Purpose, Power, Switching) - |
Data Sheet |
Negotiable |
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BAR99TA |
Diodes Inc. / Zetex |
Diodes (General Purpose, Power, Switching) - |
Data Sheet |
Negotiable |
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BAR99 |
Other |
Data Sheet |
Negotiable |
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