Product Summary

The CAT93C46S26490TE13 is a 1K-bit E2PROM memory device which is configured as either registers of 16 bits (ORG pin at VCC) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C46S26490TE13 is manufactured using Catalyst’s advanced CMOS E2PROM floating gate technology. The device is designed to endure 1,000,000 program/erase cycles and have a data retention of 100 years. The CAT93C46S26490TE13 is available in 8-pin DIP, 8-pin SOIC or 8-pin TSSOP packages.

Parametrics

CAT93C46S26490TE13 absolute maximum ratings: (1)Temperature Under Bias: –55℃ to +125℃; (2)Storage Temperature: –65℃ to +150℃; (3)Voltage on any Pin with Respect to Ground: –2.0V to +VCC +2.0V; (4)VCC with Respect to Ground: –2.0V to +7.0V; (5)Package Power Dissipation Capability (Ta = 25℃): 1.0W; (6)Lead Soldering Temperature (10 secs): 300℃; (7)Output Short Circuit Current: 100 mA.

Features

CAT93C46S26490TE13 features: (1)High Speed Operation: 93C46/56/57/66: 1MHz, 93C86: 3MHz; (2)Low Power CMOS Technology; (3)1.8 to 6.0 Volt Operation; (4)Selectable x8 or x16 Memory Organization; (5)Self-Timed Write Cycle with Auto-Clear; (6)Hardware and Software Write Protection; (7)Power-Up Inadvertant Write Protection; (8)1,000,000 Program/Erase Cycles; (9)100 Year Data Retention; (10)Commercial, Industrial and Automotive Temperature Ranges; (11)Sequential Read (except 93C46); (12)Program Enable (PE) Pin (93C86 only).

Diagrams

CAT93C46S26490TE13 block diagram

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CAT93 C86

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Data Sheet

Negotiable 
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CAT93 HC46

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CAT93C46

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Data Sheet

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EEPROM (128x8) / (64x16) 1K

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Catalyst (ON Semiconductor)

EEPROM (128x8) / (64x16) 1K

Data Sheet

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