Product Summary
The FCX717TA is a PNP silicon power transistor.
Parametrics
FCX717TA absolute maximum ratings: (1)Collector-base voltage, VCBO: -12V; (2)Collector-emitter voltage, VCEO: -12V; (3)Emitter-base voltage, VEBO: -5V; (4)Peak pulse current, ICM: -10A; (5)Continuous collector current, IC: -3A; (6)Base current, IB: -500mA; (7)Power dissipation at Tamb=25℃, Ptot: 1W; (8)Operating and storage temperature range, Tj, Tstg: -55 to +150℃.
Features
FCX717TA features: (1)2W power dissipation; (2)10A peak pulse current; (3)Excellent HFE characteristics up to 10 Amps; (4)Extremely low saturation voltage; (5)Extremely low equivalent on-resistance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
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FCX717TA |
Diodes Inc. |
Transistors Bipolar (BJT) PNP Low Saturation |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
FCX705 |
Other |
Data Sheet |
Negotiable |
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FCX705TA |
Diodes Inc. |
Transistors Darlington PNP High Voltage Darlington |
Data Sheet |
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FCX717 |
Other |
Data Sheet |
Negotiable |
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FCX717TA |
Diodes Inc. |
Transistors Bipolar (BJT) PNP Low Saturation |
Data Sheet |
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FCX718 |
Other |
Data Sheet |
Negotiable |
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FCX718TA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) PNP Low Saturation |
Data Sheet |
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