Product Summary

The FM25C160-GTR is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. The FM25C160-GTR provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25C160-GTR performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The FM25C160-GTR provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The FM25C160-GTR uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology.

Parametrics

FM25C160-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V ; (3)Storage Temperature:-55℃ to + 125℃ ; (4)Lead Temperature (Soldering, 10 seconds):300℃ ; (5)Electrostatic Discharge Voltage: Human Body Model(JEDEC Std JESD22-A114-B):4kV, Charged Device Model(JEDEC Std JESD22-C101-A):1kV, Machine Model(JEDEC Std JESD22-A115-A):400V; (6)Package Moisture Sensitivity Level:MSL-1.

Features

FM25C160-GTR features: (1)16K bit Ferroelectric Nonvolatile RAM:Organized as 2,048 x 8 bits, High Endurance 1 Trillion (1012) Read/Writes, NoDelay Writes, Advanced High-Reliability Ferroelectric Process ; (2)Very Fast Serial Peripheral Interface - SPI:Up to 15 MHz maximum Bus Frequency, Direct hardware replacement for EEPROM, SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) ; (3)Sophisticated Write Protection Scheme:Hardware Protection, Software Protection ; (4)Low Power Consumption:10μA Standby Current.

Diagrams

FM25C160-GTR block diagram

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