Product Summary

The IPB037N06N3 is a OptiMOS3 Power-Transistor.

Parametrics

IPB037N06N3 absolute maximum ratings: (1)Continuous drain current:TC=25℃:90A, TC=100℃:90A; (2)Pulsed drain current:360A; (3)Avalanche energy, single pulse:165mJ; (4)Gate source voltage:±20V; (5)Power dissipation:188W; (6)Operating and storage temperature:-55℃ to 175℃; (7)IEC climatic category; DIN IEC 68-1:55/175/56.

Features

IPB037N06N3 features: (1)for sync. rectification, drives and dc/dc SMPS; (2)Excellent gate charge x RDS(on) product (FOM); (3)Very low on-resistance RDS(on); (4)N-channel, normal level; (5)Avalanche rated; (6)Qualified according to JEDEC; (7)for target applications; (8)Pb-free plating; RoHS compliant; (9)Halogen-free according to IEC61249-2-21.

Diagrams

IPB037N06N3 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IPB037N06N3 G
IPB037N06N3 G
Infineon Technologies
MOSFET OptiMOS 3 PWR TRANST 60V 90A
Data Sheet
0-1: $1.35
1-10: $1.21
10-100: $1.10
100-250: $0.84
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IPB016N06L3 G
IPB016N06L3 G
Infineon Technologies
MOSFET OptiMOS3 PWRTrnsistr LOGIC LEVEL N-CH
Data Sheet
0-605: $1.53
605-1000: $1.29
1000-2000: $1.22
2000-5000: $1.18
IPB037N06N3 G
IPB037N06N3 G
Infineon Technologies
MOSFET OptiMOS 3 PWR TRANST 60V 90A
Data Sheet
0-1: $1.35
1-10: $1.21
10-100: $1.10
100-250: $0.84
IPB036N12N3 G
IPB036N12N3 G
Infineon Technologies
MOSFET N-KANAL POWER MOS
Data Sheet
0-1: $3.10
1-10: $2.99
10-100: $2.75
100-250: $2.23
IPB029N06N3 G
IPB029N06N3 G
Infineon Technologies
MOSFET N-Channel MOSFET 20-200V
Data Sheet
0-1: $1.57
1-10: $1.38
10-100: $1.27
100-250: $1.13
IPB033N03LG
IPB033N03LG
Infineon Technologies
MOSFET POWER MOS
Data Sheet
Negotiable 
IPB055N03L G
IPB055N03L G
Infineon Technologies
MOSFET OptiMOS 3 PWR TRANS 30V 50A
Data Sheet
0-1: $0.80
1-10: $0.72
10-100: $0.57
100-250: $0.50