(China (Mainland))
Product Summary
The IRLML2502TR is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRLML2502TR is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. The low profile (<1.1mm) of the Micro3 allows the IRLML2502TR to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Parametrics
IRLML2502TR absolute maximum ratings: (1)Drain- Source Voltage:20V; (2)Continuous Drain Current, VGS @ 4.5V:4.2A(TA=25℃); (3)Continuous Drain Current, VGS @ 4.5V:3.4A(TA=70℃); (4)Pulsed Drain Current:33s; (5)Power Dissipation:1.25W(TA=25℃); (6)Power Dissipation:0.8W(TA=70℃); (7)Linear Derating Factor:0.01 W/℃; (8)Gate-to-Source Voltage:± 12 V; (9)Junction and Storage Temperature Range:-55℃ to + 150℃.
Features
IRLML2502TR features: (1)Ultra Low On-Resistance; (2)N-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRLML2502TR |
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MOSFET N-CH 20V 4.2A SOT-23 |
Data Sheet |
Negotiable |
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IRLML2502TRPBF |
International Rectifier |
MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl |
Data Sheet |
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