Product Summary

The K6T0808C1D-GP70 is a 32Kx8 bit Low Power CMOS Static RAM. It is fabricated by SAMSUNG’s advanced CMOS process technology. The K6T0808C1D-GP70 support various operating temperature ranges and have various package types for user flexibility of system design. The K6T0808C1D-GP70 also support low data retention voltage for battery backup operation with low data retention current.

Parametrics

K6T0808C1D-GP70 absolute maximum ratings: (1)Voltage on any pin relative to Vs: -0.5 to 7.0 V; (2)Voltage on Vcc supply relative to Vss: -0.5 to 7.0 V; (3)Power Dissipation: 1.0 W; (4)Storage temperature: -65 to 150 ℃; (5)Operating Temperature: 0 to 70 ℃; (6)Soldering temperature and time: 260℃, 10sec (Lead Only).

Features

K6T0808C1D-GP70 features: (1)Process Technology : TFT; (2)Organization : 32Kx8; (3)Power Supply Voltage : 4.5~5.5V; (4)Low Data Retention Voltage : 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type : 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4 F/R.

Diagrams

K6T0808C1D-GP70 block diagram

K6T0808C1D
K6T0808C1D
Other

Data Sheet
Negotiable