(China (Mainland))
Product Summary
The K6X1008C2D-DB70 is a CMOS SRAM. It is fabricated by SAMSUNG’s advanced CMOS process technology. It support verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008C2D-DB70 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6X1008C2D-DB70 absolute maximum ratings: (1)Voltage on any pin relative to Vss: -0.5 to VCC+0.5V (Max. 7.0V) V; (2)Voltage on Vcc supply relative to Vss: -0.3 to 7.0 V; (3)Power Dissipation: 1.0 W; (4)Storage temperature: -65 to 150 ℃; (5)Operating Temperature: 0 to 70 ℃.
Features
K6X1008C2D-DB70 features: (1)Process Technology: Full CMOS; (2)Organization: 128K x 8; (3)Power Supply Voltage: 4.5~5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-SOP-525, 32-TSOP1-0820F.
Diagrams
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 K6X1008C2D-B |
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K6X1008C2D-BF55 |
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K6X1008C2D-F |
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K6X1008C2D-Q |
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K6X1008T2D-B |
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K6X1008T2D-F |
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