Product Summary

The K6X1008C2D-DB70000 is a 128Kx8 bit Low Power CMOS Static RAM. It is fabricated by SAMSUNG’s advanced CMOS process technology. The K6X1008C2D-DB70000 supports verious operating temperature ranges and have various package types for user flexibility of system design. The device also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X1008C2D-DB70000 absolute maximum ratings: (1)Voltage on any pin relative to Vss:-0.5V to VCC+0.5V(Max. 7.0V); (2)Voltage on Vcc supply relative to Vss:-0.3V to 7.0V; (3)Power Dissipation:1.0W; (4)Storage temperature:-65℃ to 150℃; (5)Operating Temperature:0℃ to 70℃.

Features

K6X1008C2D-DB70000 features: (1)Process Technology: Full CMOS; (2)Organization: 128K x 8 ; (3)Power Supply Voltage: 4.5V to 5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-SOP-525, 32-TSOP1-0820F.

Diagrams

K6X1008C2D-DB70000 block diagram

K6X1008C2D-F
K6X1008C2D-F

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K6X1008C2D-Q
K6X1008C2D-Q

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K6X1008T2D-B
K6X1008T2D-B

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K6X1008T2D-F
K6X1008T2D-F

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K6X1008T2D-Q
K6X1008T2D-Q

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K6X1008C2D-BF55
K6X1008C2D-BF55

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Negotiable