MBRD1045T4G

Power Rectifier, TO-252, 45V

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Price:: US $0.31~0.35 / piece [Get Latest Price]

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	US $0.31~0.35

PartNumber:: MBRD1045T4G

Brand:: ON Semiconductor - ON | Pack: TO | D/C: 10+

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Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-13

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Part Number:MBRD1045T4G
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Product Summary

The MBRD1045T4G is a Power Rectifier. The device employs the Schottky Barrier principle in a large metal 8722;to 8722; silicon power diode. The MBRD1045T4G features epitaxial construction with oxide passivation and metal overlay contact. The MBRD1045T4G is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.

Parametrics

MBRD1045T4G absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, VRRM: 45V; (2)Working Peak Reverse Voltage, VRWM: 45V; (3)DC Blocking Voltage, VR: 45 V; (4)Average Rectified Forward Current (Rated VR) TC = 135℃, IF(AV): 10 A; (5)Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 135℃, IFRM: 20 A; (6)Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz), IFSM: 70A; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: -65 to +175℃; (8)Voltage Rate of Change (Rated VR), dv/dt: 10000 V/μs.

Features

MBRD1045T4G features: (1)Guardring for Stress Protection; (2)Low Forward Voltage; (3)175℃ Operating Junction Temperature; (4)Epoxy Meets UL 94 V-0 @ 0.125 in; (5)Short Heat Sink Tab Manufactured - Not Sheared; (6)Pb-Free Packages are Available.