Product Summary
The NJT4030PT1G is a bipolar power transistor.
Parametrics
NJT4030PT1G absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 40Vdc; (2)Collecor-base voltage, VCB: 40Vdc; (3)Emitter-base voltage, VEB: 6.0Vdc; (4)Base current-continuous, IB: 1.0Adc; (5)Collector current-continuous, IC: 3.0Adc; peak: 5.0Adc; (6)Total power dissipation, PD: 20W; (7)Operating and storage junction temperature, TJ, Tstg: -55 to +150℃.
Features
NJT4030PT1G features: (1)Collector-emitter sustaining voltage; (2)High DC current gain; (3)Low collector-emitter saturation voltage; (4)SOT-223 surface mount package; (5)Epoxy meets UL 94; (6)ESD rating: Human body model, 3B: >8000V; Machine model: >400V; (7)Pb-free.
Diagrams
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NJT4030PT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 40V 3A PNP BIPOLAR POWER TRANSISTOR |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
NJT4030PT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 40V 3A PNP BIPOLAR POWER TRANSISTOR |
Data Sheet |
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NJT4030PT3G |
ON Semiconductor |
Transistors Bipolar (BJT) 40V 3A PNP BIPOLAR POWER TRANSISTOR |
Data Sheet |
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NJT4031NT1G |
ON Semiconductor |
Transistors Bipolar (BJT) NPN 40V LO SAT BP |
Data Sheet |
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NJT4031NT3G |
ON Semiconductor |
Transistors Bipolar (BJT) NPN 40V LO SAT BP SOT223 |
Data Sheet |
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