Product Summary

The PMV30UN is an ultra low level FET. Its applications include battery management, high-speed switches.

Parametrics

PMV30UN absolute maximum ratings: (1)VDS, drain-source voltage: 20V; (2)VDGR, drain-gate voltage: 20V; (3)VGS, gate-source voltage: ±8V; (4)ID, drain current: 5.7A//3.65A; (5)IDM, peak drain current: 23.1A; (6)Ptot total power dissipation: 1.9W; (7)Tstg, storage temperature: +150℃; (8)Tj, junction temperature: +150℃.

Features

PMV30UN features: (1)Surface mount package; (2)Fast switching.

Diagrams

PMV30UN diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
PMV30UN,215
PMV30UN,215

NXP Semiconductors

MOSFET N-CH TRENCH 20V

Data Sheet

0-1: $0.26
1-25: $0.19
25-100: $0.15
100-250: $0.10
PMV30UN
PMV30UN

Other


Data Sheet

Negotiable