(China (Mainland))
Product Summary
The RZE002P02 is a 1.2V drive Pch MOSFET. Its applications include switching.
Parametrics
RZE002P02 absolute maximum ratings: (1)Drain-source voltage, VDSS: -20V; (2)Gate-source voltage, VGSS: ±10V; (3)Drain current, continuous, ID: ±200mA; Pulsed, IDP: ±800mA; (4)Source current, continuous, IS: -100mA; Pulsed, ISP: -800mA; (5)Total power dissipation, PD: 150mW; (6)Channel temperature, Tch: 150℃; (7)Range of storage temperature, Tstg: -55 to +150℃.
Features
RZE002P02 features: (1)high speed switching; (2)small package(EMT3); (3)1.2V drive.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 RZE002P02TL |
ROHM Semiconductor |
MOSFET 1.2V DRVE PCH MOSFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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RZE002P02TL |
ROHM Semiconductor |
MOSFET 1.2V DRVE PCH MOSFET |
Data Sheet |
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RZE05DHAS |
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CONN EDGE DUAL 1MM R/A 10 POS |
Data Sheet |
Negotiable |
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RZE05DHRN |
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CONN EDGE DUAL 1MM EXTEND 10 POS |
Data Sheet |
Negotiable |
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RZE05DHHN |
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CONN EDGE DUAL 1MM DIP 10 POS |
Data Sheet |
Negotiable |
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RZE05DHFR |
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CONN EDGE DUAL 1MM SMD 10 POS |
Data Sheet |
Negotiable |
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