Product Summary
The SI1303DL-T1-E3 is a P-channel 2.5V MOSFET.
Parametrics
SI1303DL-T1-E3 absolute maximum ratings: (1)Drain-source voltage, VDS: -20V; (2)Gate-source voltage, VGS: ±12V; (3)Continuous drain current ,ID: -0.67A; (3)Pulsed drain current, IDM: -2.5A; (4)Continuous diode current, IS: -0.24A; (5)Maximum power dissipation, PD: 0.29W; (6)Operating junction and storage temperature range, TJ, TSTG: -55 to 150℃.
Features
SI1303DL-T1-E3 features: (1)Halogen-free according to IEC 61249-2-21 definition; (2)TrenchFET power MOSFET; (3)2.5V rated; (4)Compliant to RoHS directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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SI1303DL-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 0.72A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
Si1300BDL |
Other |
Data Sheet |
Negotiable |
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SI1300BDL-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 0.4A 0.2W 0.85ohm @ 4.5V |
Data Sheet |
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SI1300BDL-T1-GE3 |
MOSFET N-CH D-S 20V SC-70-3 |
Data Sheet |
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Si1300DL |
Other |
Data Sheet |
Negotiable |
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SI1300DL-T1 |
Vishay/Siliconix |
MOSFET 20V 0.25A |
Data Sheet |
Negotiable |
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Si1301DL |
Other |
Data Sheet |
Negotiable |
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