(China (Mainland))
Product Summary
The TC551664BJ-12 is a 1048,576-bit high speed static random access memory. It is well suited to cache memory applications where high-speed access and high-speed storage are required.
Parametrics
Absolute maximum ratings: (1)power supply voltage:-0.5V to 7.0V; (2)input terminal voltage:-2.0V to 7.0V; (3)input/output terminal voltage:-0.5V to VDD+0.5V; (4)power dissipation:1.5W; (5)soldering temperature(10s):260℃; (6)storage temperature:-65℃ to 150℃; (7)operating temperature:-10℃ to 85℃.
Features
Features: (1)fast access time:12ns; (2)low power dissipation:290mA; (3)single power supply voltage of 5V±10%; (4)fully static operation; (5)all inputs and outputs are TTL compatible; (6)output buffer control using OE.
Diagrams
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 TC55 |
Cornell Dubilier |
Aluminum Electrolytic Capacitors - Leaded 20uF 250V |
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TC55 Series |
Other |
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Negotiable |
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TC55100185L |
Other |
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Data Sheet |
Negotiable |
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TC551001BFL |
Other |
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Data Sheet |
Negotiable |
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TC551001BFTL |
Other |
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Data Sheet |
Negotiable |
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TC551001BPL |
Other |
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Data Sheet |
Negotiable |
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