(China (Mainland))
Product Summary
The FDU6680 N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. The applications of the FDU6680 include DC/DC converter, Motor Drives.
Parametrics
FDU6680 absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage ±20 V; (3)Continuous Drain Current @TC=25℃: 46 A, @TA=25℃: 12 A, Pulsed: 100 A; (4)Power Dissipation @TC=25℃: 56 W, @TA=25℃: 3.3 W, @TA=25℃: 1.5 W; (5)Operating and Storage Junction Temperature Range: –55 to +175 ℃.
Features
FDU6680 features: (1)46 A, 30 V, RDS(ON) = 10 mW @ VGS = 10 V, RDS(ON) = 15 mW @ VGS = 4.5 V; (2)Low gate charge; (3)Fast Switching Speed; (4)High performance trench technology for extremely low RDS(ON).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FDU6680 |
Fairchild Semiconductor |
MOSFET 30V N-Channel PowerTrench |
Data Sheet |
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FDU6680A |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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FDU6680A_Q |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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