(China (Mainland))
Product Summary
The K6X4008T1F-VB55 is fabricated by SAMSUNG advanced full CMOS process technology. The K6X4008T1F-VB55 supports various operating temperature range and have various package types for user flexibility of system design. The K6X4008T1F-VB55 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6X4008T1F-VB55 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT -0.2 to VCC+0.3(max. 3.9V) V; (2)Voltage on Vcc supply relative to Vss VCC -0.2 to 3.9 V; (3)Power Dissipation PD 1.0 W; (4)Storage temperature TSTG -65 to 150 ℃; (5)Operating Temperature TA 0 to 70 ℃.
Features
K6X4008T1F-VB55 features: (1)Process Technology: Full CMOS; (2)Organization: 512K 8; (3)Power Supply Voltage: 2.7~3.6V; (4)Low Data Retention Voltage: 2V(Min); (5)Three State Outputs; (6)Package Type: 32-SOP-525, 32-TSOP2-400F/R, 32-TSOP1-0813.4F.
Diagrams
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 K6X4008 |
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K6X4008C1F-B |
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K6X4008C1F-BF55 |
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K6X4008C1F-F |
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K6X4008C1F-Q |
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K6X4008C1F-UF55 (ROHS) |
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