STB14NK60ZT4

D2PAK, N-channel, zener-protected, power MOSFET

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Price:: US $1.00~1.40 / piece [Get Latest Price]

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PartNumber:: STB14NK60ZT4

Brand:: STMicroelectronics - ST | Pack: DIP | D/C: 05+

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Products Upload time: 2011-07-21

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Part Number:STB14NK60ZT4
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Product Summary

The STB14NK60ZT4 is a N-channel zener-protected super MESH power MOSFET. The STB14NK60ZT4 is obtained through an extreme optimization of ST well established strip-based PowerMESH TM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STB14NK60ZT4 complement ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.

Parametrics

STB14NK60ZT4 absolute maximum ratings: (1)ID Drain Current (continuous) at TC = 25℃ 13.5 13.5 (*) A; (2)ID Drain Current (continuous) at TC = 100℃ 8.5 8.5 (*) A; (3)IDM Drain Current (pulsed) 54 54 A; (4)PTOT Total Dissipation at TC = 25℃ 160 40 W; (5)Derating Factor 1.28 0.32 W/℃; (6)VDS Drain-source Voltage (VGS = 0) 600 V; (7)VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V; (8)VGS Gate-source Voltage ± 30 V; (9)VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5kΩ) 4000 V; (10)dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns; (11)VISO Insulation Winthstand Voltage (DC) 2500 V.

Features

STB14NK60ZT4 features: (1)Typical RDS(on) = 0.45 Ω; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)Gate charge minimized; (5)Very low intrinsic capacitances; (6)Very good manufacturing repeatibility.